PL & Raman Simultaneous Mapping System
MPLARSMS-266-785
PL & Raman Simultaneous Mapping System MPLARSMS-266-785
 
This Raman and PL simultaneous mapping system performs Raman spectroscopy and photoluminescence (PL) measurements simultaneously at the same spot, enabling mapping measurements of samples.
By simultaneously performing Raman measurements with a near-infrared laser and photoluminescence measurements with an ultraviolet laser, the system allows correlation analysis at the same position between structural information of semiconductor materials, such as crystallinity, stress, and composition, and optical properties, such as emission characteristics and defect levels. In addition, by switching the optical system, the system also supports Raman measurements with ultraviolet laser excitation.
Because Raman and PL mapping data can be acquired at identical coordinates, the system is an effective analytical tool for research and development, materials evaluation, and failure analysis of semiconductor materials and optoelectronic semiconductor devices.

■Features
1. Simultaneous Raman and photoluminescence mapping measurements
2. Equipped with three lasers: deep ultraviolet, ultraviolet, and near-infrared
3. A spectrometer with zero astigmatism makes the system more compact than our previous models.
4. A back-illuminated CCD with etaloning suppression enables high-sensitivity measurements.
5. A large, high-precision motorized stage with a 200 mm stroke enables mapping of 6-inch wafers.
6. The polarization of the incident and collected light can be controlled for Raman measurements, and the polarization of the collected light can be controlled for photoluminescence measurements.
7. The following measurements are available:
　• Simultaneous 325 nm-excited PL spectroscopy and 785 nm-excited Raman spectroscopy
　• Simultaneous 266 nm-excited PL spectroscopy and 785 nm-excited Raman spectroscopy
　• 266 nm-excited Raman spectroscopy
　• 325 nm-excited Raman spectroscopy
8. Computer-controlled operation and measurement

■Basic Specifications
Excitation Laser 1 Wavelength 266 nm
Output power 20 mW (CW)
Linewidth < 0.005 pm
Beam quality TEM00, M² < 1.3
Polarization ratio > 100:1
Excitation Laser 2 Wavelength 325 nm
Output power 50 mW (CW)
Transverse mode TEM00
Polarization ratio > 500:1
Excitation Laser 3 Wavelength 785 nm
Output power 70 mW
Linewidth < 200 kHz
Optics Optical system for simultaneous Raman and PL mapping measurements
Polarization measurement capability
Scanning Stage Travel XY: 200 mm
Z: 20 mm
Resolution XY: 2 μm/pulse
Z: 0.1 μm/pulse
Raman Spectroscopy Unit Focal length 320 mm
Aperture ratio f/4.6
Mechanical scan range 0–800 nm (with the standard 1200 grooves/mm grating)
Resolution 0.08 nm
Grating mount Interchangeable, 3 gratings
Astigmatism Zero astigmatism over the entire 26.8 mm × 8 mm area (within the CCD sensor) when connected to a CCD
Wavelength accuracy ±0.2 nm
Wavelength repeatability ±0.025 nm
CCD type Back-illuminated deep-depletion (DD) eXcelon type
CCD format 1340 × 400 pixels (20 μm × 20 μm)
Spectrometric well capacity High Sensitivity 300 ke- (typical), 250 ke- (min)
High Capacity 1 Me- (typical), 750 ke- (min)
Sensitivity Switchable between 250 ke- and 0.7 Me-
Dark current 0.03 e-/pixel/s (typical) at -75°C
Read noise 3 e- rms (typical), 5 e- rms (max) at 100 kHz
11 e- rms (typical), 16 e- rms (max) at 2 MHz
PL Spectroscopy Unit Focal length 101.6 mm
Aperture ratio f/4
Detector Thermoelectrically cooled back-thinned FFT-CCD area image sensor
Effective pixels 1024 × 58 pixels (24.6 μm square)
Quantum efficiency 90% (peak), 65% at 250 nm
Wavelength range 200–950 nm
Optical resolution 1.53 nm (theoretical value)
Measurement and Analysis Compatible with standard instrument control software such as LabVIEW from National Instruments
*Option: Analysis software

*Specifications and appearance are subject to change without notice for product improvement.