NIR LED Test System
MLEDTS-50NIR
NIR LED Test System MLEDTS-50NIR
 
This near-infrared LED test system measures the I-V-L (current–voltage–optical output) characteristics and emission spectra of front-emitting and back-emitting near-infrared LEDs, as well as the spectral radiant flux (2π) of back-emitting LEDs, at the wafer level. By bringing probe needles into contact with the electrodes of light-emitting devices on the wafer, the system evaluates their electrical and optical characteristics with high precision. Measuring devices while they are still on the wafer enables characterization before dicing, helping shorten development cycles and providing rapid feedback of evaluation results.

■Specifications
Sample Stage Sample size: 10 mm square to 50 mm diameter
X/Y travel: ±20 mm per axis
Platen Vertically adjustable
Travel: 4 mm
Probe Needles (Coaxial Probes) Material: Tungsten
Tip radius: 12.5 μm
Quantity: 2
Manipulators X/Y/Z travel: 10 mm per axis
Travel per rotation: 250 μm per axis
Quantity: 2
Stereo Microscope Magnification: 7×–45×
Illumination: LED ring light
Optical Detection Unit InGaAs PIN photodiode (spectral response range: 900 nm–1700 nm)
Optical fiber probe head (wavelength range: 800 nm–2400 nm)
Optical fiber (wavelength range: 400 nm–2400 nm)
Supports both front-emitting and back-emitting devices.
Integrating Sphere Wavelength range: 250 nm–2000 nm
Supports back-emitting devices only.
Spectral Measurement Unit Wavelength range: 900 nm–1700 nm
Optical resolution: 13.03 nm (theoretical value)
Detector: Temperature-controlled 512-element InGaAs linear array
Calibration Light Source Wavelength range: 350 nm–2400 nm

■IVL Measurement Data
IVL measurement data

■Spectral Radiant Flux (2π) Measurement Data
Spectral radiant flux (2π) measurement data

*Specifications and appearance are subject to change without notice for product improvement.